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Publications

Journal Publications

*as corresponding author  equal contribution  underline: Wang group member

2019

59. N. Allen, M. Xiao, X. Yan, K. Sasaki, M. J. Tadjer, J. Ma, R. Zhang, H. Wang*, Y. Zhang* “Vertical Ga2O3 Schottky Barrier Diodes With Small-Angle Beveled Field Plates: A Baliga’s Figure-of-Merit of 0.6 GW/cm2IEEE Electron Device Letters, 40, 9, 1399-1402, 2019.

58. J. Wu, X. Cong, S. Niu, F. Liu, H. Zhao, Z. Du, J. Ravichandran*, P.-H. Tan*, H. Wang* “Linear Dichroism Conversion in Quasi One-Dimensional Perovskite Chalcogenide” Advanced Materials, 31, 1902118, 2019.

57. T. Wu†, H. Zhao†, F. Liu, J. Guo*, H. Wang* “Machine Learning Approach for Device-Circuit Co-Optimization of Stochastic-Memristive-Device-Based Boltzmann Machine” arXiv:1905.04431.

56. M. Xiao, R. Zhang, D. Dong, H. Wang, Y. Zhang “Design and Simulation of GaN Superjunction Transistors with 2DEG Channels and Fin Channels” IEEE Journal of Emerging and Selected Topics in Power Electronics, Early Access, DOI: 10.1109/JESTPE.2019.2912978.

55. F. Xia*, H. Wang*, J. Hwang, A. Castro-Neto, L. Yang* “Black phosphorus and its isoelectronic materials” Nature Review Physics, 1, pp 306–317, 2019. (Invited Review Article)

54. X. Zhang, J. Grajal, J. L. Vázquez Roy, U. Radhakrishna, X. Wang, W. Chern, L. Zhou, Y. Lin, P.-C. Shen, X. Ji, X. Ling, A. Zubair, Y. Zhang, H. Wang, M. Dubey, J. Kong, M. Dresselhaus, T. Palacios “Two-dimensional MoS2-enabled Flexible Rectenna for Wireless Energy Harvesting in the Wi-Fi Band” Nature, 566, pp 368–372, 2019.

53.   X. Yan, H. Wang*, I. S. Esqueda* “Temperature-Dependent Transport in Ultrathin Black Phosphorus Field-Effect Transistors” Nano Lett., 19 (1), pp 482-487, 2019.

2018

52.   X. Yan, H. Wang*, H. Barnaby, I. S. Esqueda “Impact Ionization and Interface Trap Generation in 28-nm MOSFETs at Cryogenic Temperatures” IEEE Transactions on Device and Materials Reliability, 18, 3, 456-462, 2018.

51.   I. S. Esqueda, H. Zhao, H. Wang* “Efficient learning and crossbar operations with atomically-thin 2-D material compound synapses” Journal of Applied Physics, 124, 152133, 2018.

50.   S. Esqueda, X. Yan, C. Rutherglen, A. Kane, T. Cain, P. Marsh, Q. Liu, K. Galatsis, H. Wang*, C. Zhou “Aligned Carbon Nanotube Synaptic Transistors for Large-Scale Neuromorphic Computing” ACS Nano, 12 (7), pp 7352–7361, 2018.

49.   S. Niu†, G. Joe†, H. Zhao†, Y. Zhou, T. Orvis, H. Huyan, J. Salman, K. Mahalingam, B. Urwin, J. Wu, Y. Liu, T. Tiwald, S. B. Cronin, B. Howe, M. Mecklenburg, R. Haiges, D. J. Singh, H. Wang*, M. A. Kats*, J. Ravichandran* “Giant optical anisotropy in a quasi-1D crystal” Nature Photonics, DOI: 10.1038/s41566-018-0189-1, 2018.

48.   Z. Dong, H. Zhao, D. DiMarzio, M.-G. Han, L. Zhang, J. Tice, H. Wang*, J. Guo* “Atomically Thin CBRAM Enabled by 2D Materials: Scaling Behaviors and Performance Limits” IEEE Transactions on Electron Devices, vol. PP, no. 99, pp. 1-7, 2018.

47.   Y. Abate, D. Akinwande, S. Gamage, H. Wang, M. Snure, N. Poudel, S. B. Cronin “Recent Progress on Stability and Passivation of Black Phosphorus” Advanced Materials, DOI: 10.1002/adma.201704749, 2018.

46.   X. Yan, I. Sanchez Esqueda, J. Ma, J. Tice, H. Wang* “High breakdown electric field in β-Ga2O3/graphene vertical barristor heterostructure” Applied Physics Letters, 112, 032101, 2018. (Editor’s Pick)

2017

45.   I. S. Esqueda, H. Tian, X. Yan, H. Wang* “Transport Properties and Device Prospects of Ultrathin Black Phosphorus on Hexagonal Boron Nitride” IEEE Transactions on Electron Devices, vol. 64, no. 12, pp. 5163-5171, 2017.

44.   H. Zhao, Z. Dong, H. Tian, D. DiMarzi, M.-G. Han, L. Zhang, X. Yan, F. Liu, L. Shen, S.-J. Han, S. Cronin, W. Wu, J. Tice, J. Guo*, H. Wang* “Atomically-thin Femtojoule Memristive Device” Advanced Materials, DOI: 10.1002/adma.201703232, 2017.

43.   H. Tian, X. Cao, Y. Xie, X. Yan, A. Kostelec, D. DiMarzio, W. Wu, J. Tice, J. J. Cha, J. Guo*, H. Wang* “Emulating Bilingual Synaptic Response using Junction based Artificial Synaptic Device” ACS Nano, 11 (7), pp 7156–7163, 2017.featured in CBC news; ACS news; ScienceDaily; phys.org.

42.   B. Liao†, H. Zhao†, E. Najafi, X. Yan, H. Tian, J. Tice, A. J. Minnich*, H. Wang*, A. H. Zewail “Spatial-Temporal Imaging of Anisotropic Photocarrier Dynamics in Black Phosphorus” Nano Lett., 17 (6), pp 3675–3680, 2017.

41.   B. Deng, V. Tran, H. Jiang, C. Li, Y. Xie, Q. Guo, X. Wang, H. Tian, S. Koester, H. Wang, J. Cha, Q. Xia, L. Yang, F. Xia “Efficient Electrical Control of Thin-Film Black Phosphorus Bandgap” Nature Communications, 8, Article number: 14474, 2017.

2016

40.   H. Tian, B. Deng, M. L. Chin, X. Yan, H. Jiang, S.-J. Han, V. Sun, Q. Xia, M. Dubey, F. Xia, H. Wang* “A Dynamically Reconfigurable Ambipolar Black Phosphorus Memory Device” ACS Nano, vol. 10, 11, pp. 10428-10435, 2016.

39.   H. Tian, J. Tice*, R. Fei, V. Tran, X. Yan, L. Yang, H. Wang* “Low-Symmetry Two-Dimensional Materials for Electronic and Photonic Applications” Nano Today, vol. 11, 6, pp. 763–777, 2016. (Invited Review Article)

38.   H. Tian, Q. Guo, Y. Xie, H. Zhao, C. Li, J. J. Cha, F. Xia*, H. Wang* “Anisotropic Black Phosphorus Synaptic Device for Neuromorphic Applications” Advanced Materials, 28, 4991–4997, 2016.

37.    Q. Guo, A. Pospischil, M. Bhuiyan, H. Jiang, H. Tian, D. Farmer, B. Deng, C. Li, S. Han, H. Wang, Q. Xia, T. Ma, T. Mueller, and F. Xia* “Black Phosphorus Mid-Infrared Photodetectors with High Gain” Nano Lett., 2016, 16 (7), pp 4648–4655.

36.    H. Tian, M. L. Chin, S. Najmaei, Q. Guo, F. Xia, H. Wang*, M. Dubey* “Optoelectronic Devices based on Two-Dimensional Transition Metal Dichalcogenides” Nano Research, 9 (6), 1543-1560, 2016. (Invited Review Article)
 
35.    J.-B. Wu†, H. Zhao, Y. Li, D. Ohlberg, W. Shi, W. Wu*, H. Wang*, P.-H. Tan* “Optical Anisotropy of Monolayer Molybdenum Disulfide Nanoribbons: Optical Contrast and Raman Scattering” Advanced Optical Materials, 4.5 756-762, 2016.

2015

34.    B. Liu, M. Köpf, A. N. Abbas, X. Wang, Q. Guo, Y. Jia, F. Xia, R. Weihrich, F. Bachhuber, F. Pielnhofer, H. Wang, R. Dhall, S. B. Cronin, M. Ge, X. Fang, T. Nilges, C. Zhou “Black Arsenic–Phosphorus: Layered Anisotropic Infrared Semiconductors with Highly Tunable Compositions and Properties” Advanced Materials, 27, 30, pp. 4423–4429, 2015.
33.    Y. Jia, H. Zhao, Q. Guo, X. Wang, H. Wang, F. Xia “Tunable Plasmon-Phonon Polaritons in Layered Graphene-hexagonal Boron Nitride Heterostructures” ACS Photonics, 2, 907-912, 2015.

32.    H. Zhao, J. Wu, H. Zhong, Q. Guo, X. Wang, F. Xia, L. Yang, P.-H. Tan*, H. Wang* “Interlayer Interactions in Anisotropic Atomically-thin Rhenium Diselenide” Nano Research, 8, 11, pp. 3651-3661, 2015. (2017 Nano Research Top Paper Award)

31.    X. Ling, H. Wang*, S. Huang, F. Xia, M. Dresselhaus* “The Renaissance of Black Phosphorus” Proceedings of the National Academy of Sciences (PNAS), vol. 112, 15, pp. 4523-4530, 2015. (Perspective Article)

30.    X. Wang, A. M. Jones, K. L. Seyler, V. Tran, Y. Jia, H. Zhao, H. Wang, L. Yang, X. Xu, F. Xia “Highly Anisotropic and Robust Excitons in Monolayer Black Phosphorus” Nature Nanotechnology, vol. 10, 6, pp. 517-521, 2015.

29.    H. Zhao*, Q. Guo, F. Xia, H. Wang “Two-dimensional materials for nanophotonics application” Nanophotonics, 4.1, 2015. (Review Article)The most downloaded article among all the papers of Nanophotonics published after May, 2015.
2014

28.    H. Wang*, X. Wang, F. Xia*, L. Wang, H. Jiang, Q. Xia, et al., “Black Phosphorus Radio-Frequency Transistors,” Nano Letters, vol. 14, 11, pp. 6414–6417, 2014.

featured in ACS C&E News

27.    F. Xia, H. Wang, D. Xiao, M. Dubey, A. Ramasubramaniam “Two-Dimensional Material Nanophotonics”, Nature Photonics, vol. 8, pp. 899–907, 2014.(Review Article)

26.    F. Xia*,, H. Wang*,†, Y. Jia “Rediscovering Black Phosphorus as an Anisotropic Layered Material for Optoelectronics and Electronics” Nature Communications, vol. 5, 2014. selected as research highlights in Nature Photonics, 8, 746, 2014

Prior to Summer 2014
at IBM Watson (06/2013-06/2014)

25.    W. Zhu, T. Low, Y.-H. Lee, H. Wang, D. Farmer, J. Kong, F. Xia, P. Avouris “Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition” Nature Communications, vol. 5, 2014.

24.    T. Low, R. Roldán, H. Wang, F. Xia, P. Avouris, L. M. Moreno, F. Guinea “Plasmons and screening in monolayer and multilayer black phosphorus” Physical Review Letters, vol. 113, p. 106802, 2014.

23.    T. Low, A. S. Rodin, A. Carvalho, Y. Jiang, H. Wang, F. Xia, A. H. Castro-Neto “Tunable optical properties of multilayers black phosphorus” Physical Review B, vol. 90, p. 075434, 2014.

at MIT (2008-2013)

2D Material Nanoelectronics and Nanophotonics

22.    L. Yu*, Y.-H. Lee, X. Ling, E. J. G. Santos, Y. C. Shin, Y. Lin, M. Dubey, E. Kaxiras, J. Kong, H. Wang*, and T. Palacios* “Graphene/MoS2 Hybrid Technology for Large-Scale Two-Dimensional Electronics” Nano Lett., 14, pp. 3055-3063, 2014.

Top 10(the 2nd) most downloaded Nano Letters article of the the month, May 2014

21.    S. Rakheja, Y. Wu, H. Wang, T. Palacios, P. Avouris and D. Antoniadis “An Ambipolar Virtual-Source-Based Charge-Current Compact Model for Nanoscale Graphene Transistors” IEEE Transaction on Nanotechnology, vol. 13, pp. 1005-1013, 2014.

20.    A. Hsu, H. Wang, B. Mailly, X. Zhang, L. Yu, K. K. Kim, Y. Shi, Y. H. Lee, Y. C. Shin, M. Dubey, J. Kong, And T. Palacios “Large Area Two-Dimensional Electronics: Materials, Technology And Devices” Proceedings Of The IEEE, 101,7, pp. 1638-1652, 2013. (Invited Review Paper)

19.    X. Zhang, A. Hsu, H. Wang, Y. Song, J. Kong, M. Dresselhaus And T. Palacios “Impact Of Chlorine Functionalization On High Mobility CVD Graphene” ACS Nano, 7, 8, pp. 7262–7270, 2013.

18.    B. Mailly-Giacchetti, A. Hsu, H. Wang, V. Vinciguerra, F. Pappalardo, L. Occhipinti, E. Guidetti, S. Coffa, J. Kong, And T. Palacios “pH Sensing Properties Of Graphene Solution-Gated Field-Effect Transistors” J. Appl. Phys. 114, 084505,2013.

17.    Y.-H. Lee, L. Yu, H. Wang, W. Fang, X. Ling, Y. Shi, C.-T. Lin, J.-K. Hwang, M.-T. Chang, C.-S. Chang, M.Dresselhaus, T. Palacios, L.-J. Li, J. Kong “Synthesis and Transfer of Single Layer Transition Metal Disulfides on Diverse Surfaces” Nano Lett., 13, 4, pp. 1852-1857, 2013.
Top 10 most downloaded Nano Letters article of the month, April 2013

16.    H. Wang*,†, L. Yu, Y.-H. Lee, Y. Shi, M. Chin, L.-J. Li, M. Dubey, J. Kong, and T. Palacios* “Integrated Circuits Based on Bilayer MoS2 Transistors”, Nano Lett., 12, 9, pp. 4674-4680, 2012.
selected as research highlights in Nature Materials, 11, 829, 2012
No. 1 most downloaded Nano Letters article of the month, Sept. 2012
Top 10 most downloaded Nano Letters article of the Year, Sept. 2012 – Sept. 2013
featured in MIT News; ACS Chemical and Engineering News; IEEE Spectrum; EE Times.

15.    H. Wang, A. Hsu, and T. Palacios “Graphene Electronics for RF Applications” IEEE Microwave Magazine, vol.13, no.4, pp.114-125, June 2012. (Invited Review Paper)

14.    H. Wang, A. Hsu, D. S. Lee, K. K. Kim, J. Kong, and T. Palacios “Delay Analysis of Graphene Field Effect Transistors” IEEE Electron Dev. Lett., vol. 33, no. 3, 2012.

13.    H. Wang, T. Taychatanapat, A. Hsu, P. Jarillo-Herrero, and T. Palacios “BN/Graphene/BN Transistors for RF Applications” IEEE Electron Dev. Lett., vol. 32, no. 9, 2011.

12.    H. Wang, A. Hsu, J. Kong, D. A. Antoniadis, and T. Palacios “A Compact Virtual Source Current-Voltage Model for Top and Back-Gated Graphene Field Effect Transistors” IEEE Trans. Electron Devices, vol. 58, no. 5, pp. 1523-1533, 2011.

11.    A. Hsu, H. Wang, K. K. Kim, J. Kong and T. Palacios “Impact of Graphene Interface Quality on Contact Resistances and RF Device Performance” IEEE Electron Dev. Lett., vol. 32, no. 8, pp. 1008-1010, 2011.

10.    A. Hsu, H. Wang, K. K. Kim, J. Kong and T. Palacios “High Frequency Performance of Graphene Transistors Grown by Chemical Vapor Deposition for Mixed Signal Applications” Japanese Journal of Applied Physics, vol. 50, no. 7, 2011.

9.    H. Wang*, A. Hsu, J. Wu, J. Kong, and T. Palacios “Graphene-Based Ambipolar RF Mixers” IEEE Electron Dev. Lett., vol. 31, no. 9, pp. 906-908, 2010.

8.    T. Palacios, A. Hsu, and H. Wang “Applications of Graphene Devices in RF Communications” IEEE Communications Magazine, vol. 48, no. 6, pp. 122-128, 2010. (Invited Review Paper)

7.    H. Wang*,†, D. Nezich, J. Kong and T. Palacios “Graphene Frequency Multipliers” IEEE Electron Dev. Lett., vol. 30, no. 5, pp. 547-549, 2009.
selected for highlight in Nature, 458, 390-391 (2009). 
featured in Breakthrough of The Year (Runners-up) 2009 in Science, 326, 5960, 1600-1607 (2009). 
featured in MIT News, PhysicsWorld, EE Times, ElectronicsWeekly

GaN HEMTs for RF and Power Electronics

6.    D. S. Lee,H. Wang, A. Hsu, M. Azize, O. Laboutin, Y. Cao, J. Johnson, E. Beam, A. Ketterson, M. Schuette, P. Saunier, T. Palacios “Nanowire Channel InAlN/GaN HEMTs With High Linearity Of gm And fT”, IEEE Electron Dev. Lett., Vol. 34, No. 8, pp. 969-971, 2013

5.    D. S. Lee, J. W. Chung, H. Wang, S. Guo, P. Fay, and T. Palacios “245 GHz InAlN/GaN HEMTs with Oxygen Plasma Treatment” IEEE Electron Dev. Lett., vol. 32, no. 6, pp. 755-757, 2011.

4.    S. Guo, X. Gao, D. Gorka, J. W. Chung, H. Wang, T. Palacios, A. Crespo, J. K. Gillespie, K. Chabak, M. Trejo, V. Miller, M. Bellot, G. Via, M. Kossler, H. Smith, D. Tomich “InAlN HEMT grown on SiC by metalorganic vapor phase epitaxy for millimeter-wave applications” Physica Status Solidi (a), vol. 207, no. 6, pp. 1348–1352, 2010.

3.    H. Wang, J. W. Chung, X. Gao, S. Guo, and T. Palacios, “Al2O3 Passivated InAlN/GaN HEMTs on SiC Substrate with Record Current Density and Transconductance” Physica Status Solidi (c), vol. 7, no. 10, 2009.

at Cambridge University, England (2004-2008)

Si Power Electronic Devices

2.    H. Wang, E. Napoli, and F. Udrea, “Breakdown voltage for Charge Imbalanced Super Junction Power Devices: An analytical model valid for both Punch Through and Non Punch Through devices” IEEE Trans. Electron Devices, vol. 56, no. 12, pp. 3175-3183, 2009.

1.    E. Napoli, H. Wang, and F. Udrea “The Effect of Charge Imbalance on Superjunction Power Devices: An Exact Analytical Solution” IEEE Electron Dev. Lett., vol. 29, no. 3, pp. 249-251, 2008.

Selected Conference Publications

2D Material Electronics
9.    S. Rakheja, H. Wang, T. Palacios, I. Meric, K. Shepard, and D. Antoniadis “A unified charge-current compact model for ambipolar operation in quasi-ballistic graphene transistors: Experimental verification and circuit-analysis demonstration” International Electron Devices Meeting (IEDM) Tech. Digest, 2013.

8.    H. Wang, L. Yu, Y.-H. Li, W. Fang, A. Hsu, P. Herring, M. Chin, L.-J. Li, M. Dubey, J. Kong, and T. Palacios “Largescale 2D Electronics based on Single-layer MoS2 Grown by Chemical Vapor Deposition”, International Electron Devices Meeting (IEDM) Tech. Digest., 4.6, 2012.
Roger A. Haken Best Student Paper Award, IEDM 2012

7.    H. Wang, A. Hsu, B. Mailly, K. K. Kim, J. Kong, and T. Palacios “Towards Ubiquitous RF Electronics based on Graphene” IEEE MTT-S International Microwave Symposium (IMS) Digest, WE3A-1, 2012. (Invited Paper)

6.    H. Wang, A. Hsu, K. K. Kim, J. Kong, and T. Palacios “Graphene Electronics for RF Applications” IEEE MTT-S International Microwave Symposium (IMS) Digest, TH2D-3, 2011. (Invited Paper)

5.    H. Wang, A. Hsu, K. K. Kim, J. Kong, and T. Palacios “Gigahertz Ambipolar Frequency Multiplier based on CVD Graphene” International Electron Devices Meeting (IEDM) Tech. Digest, 23.6, pp. 572, 2010.

GaN HEMTs for RF and Power Electronics

4.    D. S. Lee, H. Wang, A. Hsu, M. Azize, O. Laboutin, Y. Cao, W. Johnson, E. Beam, A. Ketterson, M. Schuette, P. Saunier, and T. Palacios “High Linearity Nanowire Channel GaN HEMTs” 71st Device Research Conference (DRC), 2013, Notre Dame, IN.

3.    H. Wang, J. W. Chung, X. Gao, S. Guo and T. Palacios “High Performance InAlN/GaN HEMTs on SiC Substrate” International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH), May 17- 20, 2010, Portland, OR.Best Student Paper Award, CS MANTECH 2010

2.    H. Wang, J. W. Chung, X. Gao, S. Guo, and T. Palacios, “Al2O3 Passivated InAlN/GaN HEMTs on SiC Substrate with Record Current Density and Transconductance”, the 36th International Symposium on Compound Semiconductors (ISCS), 2009, Santa Barbara, CA. (Invited Paper)

Si Power Electronic Devices

1.    E. Napoli, H. Wang and F. Udrea “Analytical calculation of the breakdown voltage for balanced, symmetrical superjunction power devices” Proceedings of the 22nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), June 6-10, 2010, Hiroshima, Japan.

Patents

2.    L. Yu, H. Wang, and T. Palacios “Graphene-MoS2 Hybrid Technology for Large-Scale Two Dimensional Electronics” US Patent Application No.: 61/899418,pending.

1.    J. Chung, H. Wang, and T. Palacios “Fabrication Technique for Gallium Nitride Substrates” ,US Patent 8703623 B2 April 2014.

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