23. M. Xiao, Y. Ma, Z. Du, Y. Qin, K. Liu, K. Cheng, F. Udrea, A. Xie, E. Beam, B. Wang, J. Spencer, M. Tadjer, T. Anderson, H. Wang*, Y. Zhang* “First Demonstration of Vertical Superjunction Diode in GaN” IEEE International Electron Devices Meeting (IEDM) 2022, accepted.
22. Y. Chung, B. Chou, C. Hsu, W. Yun, M. Li, S. Su, Y. Liao, M. Lee, G. Huang, S. Liew, Y. Shen, W. Chang, C. Chen, C. Kei, H. Wang, H.-S. P. Wong, T. Lee, C. Chien, C. Cheng, I. Radu “First Demonstration of GAA Monolayer-MoS2 Nanosheet nFET with 410 μA/μm ID at 1V VD at 40nm gate length” IEEE International Electron Devices Meeting (IEDM) 2022, accepted.
Selected for IEDM Technical Highlights
21. D. Sathaiya, T. Hung, E. Chen, W. Wu, A. Wei, C. Chuu, S. Su, A. Chou, C. Chung, C. Chien, H. Wang, J. Cai, C. Wu, I. Radu, J. Wu “Comprehensive Physics Based TCAD Model for 2D MX2 Channel Transistors” IEEE International Electron Devices Meeting (IEDM) 2022, accepted.
20. N. Yang, Y. Lin, C. Chuu, S. Rahman, T. Wu, A. Chou, S. Liew, K. Fujiwara, H. Chen, J. Ikeda, A. Tsukazaki, D. Hou, W. Woon, S. Liao, S. Huang, X. Qian, J. Guo, I. Radu, H.-S. P. Wong, H. Wang* “Computational Screening and Multiscale Simulation of Barrier-Free Contacts for 2D Semiconductor pFET” IEEE International Electron Devices Meeting (IEDM) 2022, accepted.
Selected for IEDM Technical Highlights
featured in Nature Electronics “Semimetals make good p-type contacts” by M. Parker
19. T. Lee, E. Su, B. Lin, Y. Chen, W. Yun, P. Ho, J. Wang, S. Su, C. Hsu, P. Mao, Y. Chang, C Chien, B. Liu, C. Su, C. Kei, H. Wang, H.-S. P. Wong, T. Lee, W. Chang, C Cheng, I. Radu “Nearly Ideal Subthreshold Swing in Monolayer MoS2 Top-Gate nFETs with Scaled EOT of 1 nm” IEEE International Electron Devices Meeting (IEDM) 2022, accepted.
Selected for IEDM Technical Highlights
18. T. Hung, M. Li, W. Yun, S. Chou, S. Su, E. Chen, S. Liew, Y. Yang, K. Lin, D. Hou, T. Lee, H. Wang, C. Cheng, M. Lin, H.-S. P. Wong, I. Radu “pMOSFET with CVD-grown 2D semiconductor channel enabled by ultra-thin and fab-compatible spacer doping” IEEE International Electron Devices Meeting (IEDM) 2022, accepted.
17. A. Chou, Y. Lin, Y. Lin*, C. Hsu, M. Li, S. Liew, S. Chou, H. Chen, H. Chiu, P. Ho, M. Hsu, Y. Hsu, N. Yang, W. Woon, S. Liao, D. Hou, C. Chien, W. Chang, I. Radu, C. Wu, H.-S. P. Wong, H. Wang* “High-Performance Monolayer WSe2 p/n FETs via Antimony-Platinum Modulated Contact Technology towards 2D CMOS Electronics” IEEE International Electron Devices Meeting (IEDM) 2022, accepted.
16. Y. Lin, P. Shen, C. Su, A. Chou, T. Wu, C. Cheng, J. Park, M. Chiu, A. Lu, H. Tang, M. Tavakoli, G. Pitner, X. Ji, C. McGahan, X. Wang, Z. Cai, N. Mao, J. Wang, Y. Wang, W. Tisdale, X. Ling, K. Aidala, V. Tung, J. Li, A. Zettl, C. Wu, J. Guo, H. Wang, J. Bokor, T. Palacios, L. Li, J. Kong “Contact Engineering for High-Performance N-Type 2D Semiconductor Transistors” IEEE International Electron Devices Meeting (IEDM) 2021, 37.2. 1-37.2. 4 2021.
15. Z. Mutlu, Y. Lin, G. Barin, Z. Zhang, G. Pitner, S. Wang, R. Darawish2, M. Giovannantonio, H. Wang, J. Cai, M. Passlack, C. H. Diaz, A. Narita, K. Müllen, F. Fischer, P. Bandaru, A. C. Kummel, P. Ruffieux, R. Fasel, and J. Bokor “Short-Channel Double-Gate FETs with Atomically Precise Graphene Nanoribbons” IEEE International Electron Devices Meeting (IEDM) 2021, 37.4. 1-37.4. 4 2021.
14. M. Xiao, Y. Ma, Z. Du, V. Pathirana, K. Cheng, A. Xie, E. Beam, Y. Cao, F. Udrea, H. Wang*, Y. Zhang* “Multi-Channel Monolithic-Cascode HEMT (MC2-HEMT): A New GaN Power Switch up to 10 kV” IEEE International Electron Devices Meeting (IEDM) 2021, 5.5. 1-5.5. 4 1 2021.
Selected for IEDM Technical Highlights
featured in Nature Electronics “A gallium nitride HEMT that enhances” by M. Parker
13. Y. Cui, H. Chen, S. Chen, D. Linkhart, H. Tan, J. Wu, S. Yoon, M. Geiler, A. Geiler, E. Beam, A. Xie, N. Wang, M. Regan, M. Kruzich, B. Nguyen, D. White, A. Ketterson, C. Lee, D. Willis, H. Wang*, Y. Cao* “Monolithically Integrated Self-Biased Circulator for mmWave T/R MMIC Applications” IEEE International Electron Devices Meeting (IEDM) 2021, 4.2. 1-4.2. 4 2021.
12. A. Chou, T. Wu, C. Cheng, S. Zhan, I. Ni, S. Wang, Y. Chang, S. Liew, E. Chen, W. Chang, C. Wu, J. Cai, H. Wong, H. Wang* “Antimony Semimetal Contact with Enhanced Thermal Stability for High Performance 2D Electronics” IEEE International Electron Devices Meeting (IEDM) 2021, 7.2. 1-7.2. 4 2021.
11. M. Xiao*, Y. Ma, Z. Du, X. Yan, R. Zhang, K. Cheng, K. Liu, A. Xie, E. Beam, Y. Cao, H. Wang*, Y. Zhang* “5 kV Multi-Channel AlGaN/GaN Power Schottky Barrier Diodes with Junction Fin Anode” International Electron Devices Meeting (IEDM), 2020.
Selected for IEDM Technical Highlights
featured in Nature Electronics “Gallium nitride gets wrapped up” by S. Thomas
10. N. Yang, H.-Y. Chen, J. Wu, T. Wu, J. Cao, X. Ling, H. Wang*, J. Guo* “Multiscale Simulation of Ferroelectric Tunnel Junction Memory Enabled by van der Waals Heterojunction: Comparison to Experiment and Performance Projection” International Electron Devices Meeting (IEDM), 2020.
Selected for IEDM Technical Highlights
9. S. Rakheja, H. Wang, T. Palacios, I. Meric, K. Shepard, and D. Antoniadis “A unified charge-current compact model for ambipolar operation in quasi-ballistic graphene transistors: Experimental verification and circuit-analysis demonstration” International Electron Devices Meeting (IEDM) Tech. Digest, 2013.
8. D. S. Lee, H. Wang, A. Hsu, M. Azize, O. Laboutin, Y. Cao, W. Johnson, E. Beam, A. Ketterson, M. Schuette, P. Saunier, and T. Palacios “High Linearity Nanowire Channel GaN HEMTs” 71st Device Research Conference (DRC), 2013, Notre Dame, IN.
7. H. Wang, L. Yu, Y.-H. Li, W. Fang, A. Hsu, P. Herring, M. Chin, L.-J. Li, M. Dubey, J. Kong, and T. Palacios “Largescale 2D Electronics based on Single-layer MoS2 Grown by Chemical Vapor Deposition”, International Electron Devices Meeting (IEDM) Tech. Digest., 4.6, 2012.
Roger A. Haken Best Student Paper Award, IEDM 2012
6. H. Wang, A. Hsu, B. Mailly, K. K. Kim, J. Kong, and T. Palacios “Towards Ubiquitous RF Electronics based on Graphene” IEEE MTT-S International Microwave Symposium (IMS) Digest, WE3A-1, 2012. (Invited Paper)
5. H. Wang, A. Hsu, K. K. Kim, J. Kong, and T. Palacios “Graphene Electronics for RF Applications” IEEE MTT-S International Microwave Symposium (IMS) Digest, TH2D-3, 2011. (Invited Paper)
4. H. Wang, A. Hsu, K. K. Kim, J. Kong, and T. Palacios “Gigahertz Ambipolar Frequency Multiplier based on CVD Graphene” International Electron Devices Meeting (IEDM) Tech. Digest, 23.6, pp. 572, 2010.
3. E. Napoli, H. Wang and F. Udrea “Analytical calculation of the breakdown voltage for balanced, symmetrical superjunction power devices” Proceedings of the 22nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), June 6-10, 2010, Hiroshima, Japan.
2. H. Wang, J. W. Chung, X. Gao, S. Guo and T. Palacios “High Performance InAlN/GaN HEMTs on SiC Substrate” International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH), May 17- 20, 2010, Portland, OR.
Best Student Paper Award, CS MANTECH 2010.
1. H. Wang, J. W. Chung, X. Gao, S. Guo, and T. Palacios, “Al2O3 Passivated InAlN/GaN HEMTs on SiC Substrate with Record Current Density and Transconductance”, the 36th International Symposium on Compound Semiconductors (ISCS), 2009, Santa Barbara, CA. (Invited Paper)